Polarization effects due to thickness fluctuations in nonpolar InGaN/GaN quantum wells
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چکیده
منابع مشابه
InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays.
Uniform GaN nanorod arrays are grown vertically by selective area growth on (left angle bracket 0001 right angle bracket) substrates. The GaN nanorods present six nonpolar {1⁻100} facets, which serve as growth surfaces for InGaN-based light-emitting diode quantum well active regions. Compared to growth on the polar {0001} plane, the piezoelectric fields in the multiple quantum wells (MQWs) can ...
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